A sophomore of Shenzhen Technology University (SZTU) published a research paper in Journal of Magnetism and Magnetic Materials, an important academic journal in the field of magnetism on March 29. The research paper titled “Manipulation of perpendicular exchange bias and spin-orbit torques via MgO in Pt/Co/MgO films” was written by Chen Zhiren, sophomore from College of New Materials and New Energies, whose advisor is An Hongyu, associate professor from the same College.

The cover of Journal of Magnetism and Magnetic Materials [Photo/www.sciencedirect.com]

The Journal of Magnetism and Magnetic Materials provides an important forum for the disclosure of original contributions covering topics from basic magnetism to the technology and applications of magnetic materials.

Chen Zhiren [Photo/College of New Materials and New Energies]

Magnetic random access memory (MRAM) has come to the foreground due to its energy-efficient, high-speed and non-volatile properties, and the latest generation of magnetic random access technology based on spin-orbit torque (SOT) has been widely studied in recent years.

Chen Zhiren [Photo/College of New Materials and New Energies]

This paper systematically studied the perpendicular exchange bias (PEB) and spin-orbit torque (SOT) generation in the Pt/Co/MgO heterostructure by changing the thickness of the MgO layer. The result shows that the MgO thickness has significant effect on the SOT generation and provides a way to manipulate the magnetic properties by adjusting the oxide layers. The full text can be found at: https://www.sciencedirect.com/science/article/pii/S0304885320303255?via%3Dihub.

Drafted by Brian（郑斌）/ International Cooperation & Student Affairs Office

Edited by Brian（郑斌）/ International Cooperation & Student Affairs Office